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Science

A 7-eV bandgap semiconductor based on silicon-doped α-(Al x Ga 1− x ) 2 O 3

October 7, 2026 · 12:00 am 1 sources

Image: Nature

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  • A 7-eV bandgap semiconductor based on silicon-doped α-(Al x Ga 1− x ) 2 O 3
    Nature · October 7, 2026 00:00
    Nature, Published online: 07 October 2026; doi:10.1038/s41586-026-11085-3 Suboxide molecular-beam epitaxy is used to grow silicon-doped α-(AlxGa1−x)2O3 films with bandgaps exceeding 7.0 eV, enabling the fabrication of a Schottky diode and a field-effect transistor with colossal-bandgap channels.

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