Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride

September 30, 2026 · 12:00 am 1 sources

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• Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride
  Nature · September 30, 2026 00:00
  Nature, Published online: 30 September 2026; doi:10.1038/s41586-026-11047-9 A dual-precursor chemical system is used to achieve wafer-scale epitaxy growth of boron carbon nitride, a high-performance p-type semiconductor, for potential integration in efficient 2D materials for electronics.